IndiumV3, Russie, Analysis, bibRecord, 001450

Effect of deposition parameters on the properties of In2O3/InP junctions

Identifieur interne : 001450 ( Russie/Analysis ); précédent : 001449; suivant : 001451

Effect of deposition parameters on the properties of In2O3/InP junctions

Auteurs : RBID : Pascal:94-0253886

Descripteurs français

Pascal (Inist)
- Etude expérimentale, 6855J, 8115E, 8280P, Indium oxyde, Couche mince, Dépôt physique phase vapeur, Indium phosphure, Phénomène interface, Domaine température 273-400 K, Composition chimique, AES, XRD, MEB, Analyse chimique structurale.

English descriptors

KwdEn :
- AES, Chemical composition, Experimental study, Indium oxides, Indium phosphides, Interface phenomena, Physical vapor deposition, SEM, Structural chemical analysis, Temperature range 273-400 K, Thin films, XRD.

Abstract

Transparent conducting indium oxide films have been prepared by means of reactive evaporation of In onto p-type InP substrates at various deposition temperatures [in the range of 25 °C (RT)-330 °C] and under different oxygen pressures (in the range of 8×10^-5 Torr up to 9×10^-4 Torr). The chemical composition and structural properties of the films have been investigated using such analytical tools as Auger electron spectroscopy (AES), x-ray diffraction, and scanning electron microscopy (SEM). The combination of AES and SEM has proved to be extremely useful for interface analysis. The concentrations of oxidized and unoxidized (elemental) In in the tested samples have been investigated by deconvolution of the appropriate Auger MNN transitions using reference spectra of In₂O₃ and InP. The films were found to be polycrystalline at all deposition temperatures above RT under all the tested range of oxygen pressures. Nearly stoichiometric In₂O₃ films have been observed on all the investigated samples. Elemental In at the interfaces of films grown at low deposition temperatures has been noted. The effect of the oxygen pressure and deposition temperature on the films properties is discussed.

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Pascal:94-0253886

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of deposition parameters on the properties of In<sub>2</sub>
O<sub>3</sub>
/InP junctions</title>
<author><name sortKey="Korobov, V" uniqKey="Korobov V">V. Korobov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering-Physical Electronics, Tel Aviv University, Ramat Aviv 69978, Israel</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Israël</country>
<wicri:regionArea>Department of Electrical Engineering-Physical Electronics, Tel Aviv University, Ramat Aviv 69978</wicri:regionArea>
<wicri:noRegion>Ramat Aviv 69978</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Shapira, Yoram" uniqKey="Shapira Y">Yoram Shapira</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering-Physical Electronics, Tel Aviv University, Ramat Aviv 69978, Israel</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Israël</country>
<wicri:regionArea>Department of Electrical Engineering-Physical Electronics, Tel Aviv University, Ramat Aviv 69978</wicri:regionArea>
<wicri:noRegion>Ramat Aviv 69978</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ber, B" uniqKey="Ber B">B. Ber</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia</s1>
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<country xml:lang="fr">Russie</country>
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<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
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<author><name sortKey="Faleev, K" uniqKey="Faleev K">K. Faleev</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia</s1>
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<country xml:lang="fr">Russie</country>
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<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
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</author>
<author><name sortKey="Zushinskiy, D" uniqKey="Zushinskiy D">D. Zushinskiy</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia</s1>
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<country xml:lang="fr">Russie</country>
<wicri:regionArea>Ioffe Physical-Technical Institute, 194021 St. Petersburg</wicri:regionArea>
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<term>Indium phosphides</term>
<term>Interface phenomena</term>
<term>Physical vapor deposition</term>
<term>SEM</term>
<term>Structural chemical analysis</term>
<term>Temperature range 273-400 K</term>
<term>Thin films</term>
<term>XRD</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>6855J</term>
<term>8115E</term>
<term>8280P</term>
<term>Indium oxyde</term>
<term>Couche mince</term>
<term>Dépôt physique phase vapeur</term>
<term>Indium phosphure</term>
<term>Phénomène interface</term>
<term>Domaine température 273-400 K</term>
<term>Composition chimique</term>
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<front><div type="abstract" xml:lang="en">Transparent conducting indium oxide films have been prepared by means of reactive evaporation of In onto p-type InP substrates at various deposition temperatures [in the range of 25 °C (RT)-330 °C] and under different oxygen pressures (in the range of 8×10<sup>-5</sup>
 Torr up to 9×10<sup>-4</sup>
 Torr). The chemical composition and structural properties of the films have been investigated using such analytical tools as Auger electron spectroscopy (AES), x-ray diffraction, and scanning electron microscopy (SEM). The combination of AES and SEM has proved to be extremely useful for interface analysis. The concentrations of oxidized and unoxidized (elemental) In in the tested samples have been investigated by deconvolution of the appropriate Auger MNN transitions using reference spectra of In<sub>2</sub>
O<sub>3</sub>
 and InP. The films were found to be polycrystalline at all deposition temperatures above RT under all the tested range of oxygen pressures. Nearly stoichiometric In<sub>2</sub>
O<sub>3</sub>
 films have been observed on all the investigated samples. Elemental In at the interfaces of films grown at low deposition temperatures has been noted. The effect of the oxygen pressure and deposition temperature on the films properties is discussed.</div>
</front>
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<fA14 i1="02"><s1>Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia</s1>
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 Torr up to 9×10<sup>-4</sup>
 Torr). The chemical composition and structural properties of the films have been investigated using such analytical tools as Auger electron spectroscopy (AES), x-ray diffraction, and scanning electron microscopy (SEM). The combination of AES and SEM has proved to be extremely useful for interface analysis. The concentrations of oxidized and unoxidized (elemental) In in the tested samples have been investigated by deconvolution of the appropriate Auger MNN transitions using reference spectra of In<sub>2</sub>
O<sub>3</sub>
 and InP. The films were found to be polycrystalline at all deposition temperatures above RT under all the tested range of oxygen pressures. Nearly stoichiometric In<sub>2</sub>
O<sub>3</sub>
 films have been observed on all the investigated samples. Elemental In at the interfaces of films grown at low deposition temperatures has been noted. The effect of the oxygen pressure and deposition temperature on the films properties is discussed.</s0>
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Effect of deposition parameters on the properties of In2O3/InP junctions

Effect of deposition parameters on the properties of In2O3/InP junctions

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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